Recently, several ways have been developed to solve the thickness effect in (RE) BCO films. Using multilayer technology, Selleck Adriamycin Foltyn et al. have achieved J c values of up to 4.0 × 106 A/cm2 in the film with a thickness

of 3.5 μm, at_75 K, self-field on metal substrates [9]. Tran et al. have overcome the rapid decrease of J c value by BaSnO3 addition in (Gd) BCO films [23]. Feldmann et al. achieved a J c (75.6 K, self-field) of 5.2 × 106 A/cm2 in a single-layer 2.0-μm-thick YBCO film with BaZrO3 (BZO) and Y2O3 additions [24]. Dürrschnabel et al. obtained the J c of (Dy) BCO film to be 1.7 × 106 A/cm2 at 77 K and self-field with a thickness of 5.9 μm on inclined substrate-deposited MgO-buffered Hastelloy substrates [25]. These research results are exciting. Our next research work will focus

Selleck Selonsertib on finding methods to overcome the thickness effect in (RE) BCO films. Conclusions GdBCO films with different thicknesses are prepared on CeO2/YSZ/CeO2-buffered Ni-W substrates by means of RF sputtering. The stress and microstructure of the GdBCO films with various thicknesses are investigated by XRD, SEM, AFM, and XPS techniques. click here For the 200-nm-thick film, the highest J c value of 4.0 MA/cm2 has been obtained. The highest J c value is attributed to high-level compressive stresses for the 200-nm-thick film. A nearly linear relationship between I c and film thickness is observed as the film thickness increases from 200 to 1,030 nm. It is realized that differences of stress and roughness do not affect the supercurrent carrying ability with increasing film thickness. We find that when the film thickness approaches

to a certain value about 1,030 nm, the a-axis grains appear at the upper surface. As a result, more and more a-axis grains lead to lots of grain gaps, which will PIK-5 certainly reduce the effective supercurrent carrying cross section. In addition, oxygen deficiency is found for upper layers beyond 1,030 nm for F1450 and F2100. It can be understood that the slower increase of I c for the 1,450-nm-thick film and no increase of I c for the 2,100-nm-thick film are due to a-axis grains, gaps between a-axis grains, and oxygen deficiency for the upper layers of the thick film. Acknowledgements This work is supported by the ITER Plan Project (grant no. 2011GB113004), Shanghai Science and Technology Committee (grant no. 11DZ1100402), Graduate Student Innovation Ability Training Special Fund projects (grant no. Z-072-004), National Science and Technology (grant no. 11204174), and Shanghai Youth Science and Technology The Phosphor Plan (tracking) (grant no. 11QH140100). The authors gratefully thank the Instrumental Analysis Center of Shanghai Jiao Tong University and MA-tek analytical lab for the competent technical assistance. References 1. Larbalestier D, Gurevich A, Feldmann DM, Polyanskii A: High-T-c superconducting materials for electric power applications. Nature 2001, 414:368–377.CrossRef 2.