On the contrary, as the erasing voltage changes from -8 Tanespimycin nmr to -12 V, the resulting C-V curve moves gradually in the direction of negative bias, see Figure 9b. This reveals hole trapping and electron de-trapping in the MOS structure. In a word, our experimental results indicate that the MOS capacitor with Pt STI571 cost nanodots can be programmed and erased efficiently even under low voltages of ±8 V, and the

resulting memory window is as large as 2.8 V for 1 ms of programming/erasing time. Figure 9 High-frequency (1 MHz) C – V curves of the memory capacitor. Corresponding to (a) programming and (b) erasing under different gate voltage for 1 ms, respectively. Figure 10 shows the charge retention characteristics of the MOS capacitor with Pt nanodots at room temperature. It is seen that the memory window is close to 8.2 V after programming/erasing under ±12 V for 1 ms,

and the deduced memory window still approaches 5.6 V after 10 years by extrapolation. This indicates that Pt nanodots can offer not only enough capability for electron storage but also good charge retention characteristic. Figure 10 Charge retention characteristics of the MOS capacitor with Angiogenesis inhibitor Pt nanodots at room temperature. Conclusions Growth of Pt nanodots on the surface of Al2O3 has been investigated by ALD using (MeCp)Pt(Me)3 and O2 precursors. By optimizing substrate temperature, pulse time of (MeCp)Pt(Me)3, and deposition cycles, Pt nanodots with a high density of approximately 2 × 1012 cm-2 have been achieved, i.e., the process parameters are as follows: substrate temperature 300°C, (MeCp)Pt(Me)3 pulse time 1 s, and 70 deposition Morin Hydrate cycles. Further, the fabricated MOS capacitor with Pt nanodots exhibits noticeable programmable and erasable characteristics even under low voltages of ±8 V, a large memory window, and good charge retention at room temperature. Acknowledgments The authors thank the financial support of the National Key

Technologies R&D Program (2009ZX02302-002), National Natural Science Foundation of China (no. 61076076, 61274088), the Program for New Century Excellent Talents in University (NCET-08-0127), and the Key Project of the Chinese Ministry of Education (108052). References 1. Gu DF, Baumgart H, Tapily K, Shrestha P, Namkoon G, Ao XY, Müller F: Precise control of highly ordered arrays of nested semiconductor/metal nanotubes. Nano Res 2011, 4:164–170.CrossRef 2. Jiang XR, Huang H, Prinz FB, Bent SF: Application of atomic layer deposition of platinum to solid oxide fuel cells. Chem Mater 2008, 20:3897–3905.CrossRef 3. Liu C, Wang CC, Kei CC, Hsueh YC, Perng TP: Atomic layer deposition of platinum nanoparticles on carbon nanotubes for application in proton-exchange membrane fuel cells. Small 2009, 5:1535–1538.CrossRef 4.