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effect of residual stresses in the ZnO buffer layer on the density of a ZnO nanowire array. Nanotechnology 2008, 19:225303.CrossRef Competing interests The authors declare that they have no competing interests. Authors’ contributions HIL designed and carried out the experiment, statistical analysis, and participated in the draft of the manuscript. SYK supervised the research and revised the manuscript. Both authors read and approved the final manuscript.”
“Background Recently, semiconductor one-dimensional (1D) nanostructures have been attracting much attention in fundamental find more research and in potential applications for nanodevices. There are numerous studies on 1D nanostructures of Si, Ge, and III-V and also on oxide systems such as tin oxide (SnO2), silicon oxide (SiO2), indium tin oxide (ITO), zinc oxide (ZnO),
and aluminum oxide (Al2O3). Among them, ZnO has been expected to be one of the most important optoelectronic materials with piezoelectricity, biocompatibility, wide bandgap (approximately 3.37 eV), and large exciton binding energy (approximately 60 meV) at room temperature [1, 2]. Due to their exceptional physical and chemical properties, HSP90 1D ZnO nanostructures, such as nanorods, nanowires (NWs), nanotubes, and nanoneedles, are very attractive as well. Arrays of vertically aligned ZnO nanostructures are considered to be a promising candidate for applications in blue UV light emitters, field emission devices, high-efficiency photonic devices, photovoltaic devices, and biosensors [3–10]. So far, various kinds of high-quality and well-aligned 1D ZnO nanostructures have been realized using vapor-phase transport, metal-organic vapor-phase epitaxy, pulsed laser deposition, and wet chemistry methods [11–15]. Vapor–liquid-solid (VLS) and vapor-solid (VS) processes have been employed by many researchers for the growth of 1D ZnO nanostructures because of its simple procedure and relatively low cost.