Except previously discussed narrow line with the maximum at 420cm?1 two band with maxima at 430cm?1 and 490cm?1 can be recognized in the spectrum. The band with the maximum at 430cm?1 has the best correlation with band R reported for SiO2 spectrum. Band with the maximum at 490cm?1 has the best correlation with D1 band reported for non-densified bulk silicon oxide. Appearing in LaLuO3 spectrum http://www.selleckchem.com/products/Imatinib-Mesylate.html line with the maximum at 480cm?1 has very small FWHM. Narrow line with the maximum at about 550cm?1 appears in Raman spectra of both oxides: LaLuO3 and GdSiO. The FWHM of the line observed for LaLuO3 is significantly smaller than the FWHM of the same line in GdSiO spectrum. The line 550cm?1 has the best correlation with coesite line centered around 522cm?1 [13].

The next two bands appearing in Raman spectra of lanthanum-lutetium oxide and gadolinium-silicon oxide have the maxima at 600cm?1 and 640cm?1. The bands can be correlated with D2 band reported for silicon oxide. The maximum 600cm?1 corresponds to non-densified structure, and 640cm?1 corresponds to densified one. The next band present in Raman spectra recorded for lanthanum-lutetium and gadolinium-silicon oxides has the maximum at about 800cm?1. The position of the maximum and asymmetric shape of the band with steep gradient on the blue side of maximum (for smaller values of Raman shift) look like the band ��800cm?1�� observed for non-densified bulk SiO2. The intensity of the band refering to the intensity of one-phonon Si line in the case of LaLuO3 and GdSiO is about twice larger than for silicon dioxide layer.

Also the intensity ratio of the following bands ��800cm?1�� and main band (placed below Si line ��520cm?1��) is in the case of LaLuO3 and GdSiO few times larger than for SiO2. In the range of Raman shift between 930cm?1 and 1030cm?1 the following features can be recognized:single asymmetric band with the maximum at 970cm?1 for LaLuO3;two band with maxima at 950cm?1 and 980cm?1 for GdSiO.Raman spectra recorded for both oxide layers, LaLuO3 and GdSiO, show broad, oval background which ranges from 650cm?1 to 1400cm?1. Bands described previously appear on this background. The Raman signals observed for LaLuO3 and GdSiO do not have typical shape of the band observed for SiO2 layer and are assigned to multi-phonon scattering from Si substrate [9].

It is possible that the band assigned to multi-phonon GSK-3 scattering is modified and partially masked by the broad background. The last two bands which can be recognized in spectra measured for lanthanum-lutetium and gadolinium-silicon oxide films have the maxima at about 1070cm?1 and 1200cm?1. The band with the maximum at 1070cm?1 has a symmetric shape. The band with the maximum at 1200cm?1 seems to be asymmetric. The tail of this band ranges up to 1400cm?1.